cystech electronics corp. spec. no. : c788h8 issued date : 2010.09.23 revised date : 2010.10.06 page no. : 1/7 MTB03N03H8 cystek product specification n-channel logic level enhancement mode power mosfet MTB03N03H8 bv dss 30v i d 75a r dson(max) 3m description the MTB03N03H8 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb-free lead plating and halogen-free package symbol outline MTB03N03H8 edfn56 pin 1 g gate d drain s source
cystech electronics corp. spec. no. : c788h8 issued date : 2010.09.23 revised date : 2010.10.06 page no. : 2/7 MTB03N03H8 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t c =25 c 75 continuous drain current @ t c =100c i d 45 pulsed drain current i dm 160 *1 avalanche current i as 53 a avalanche energy @ l=0.1mh, i d =53a, r g =25 e as 140 repetitive avalanche energy @ l=0.05mh e ar 40 *2 mj t c =25 60 total power dissipation t c =100 p d 32 w operating junction and storage temp erature range tj, tstg -55~+175 c 100% uis testing in condition of v d =15v, l=0.1mh, v g =10v, i l =40a, rated v ds =30v n-ch thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 2.5 c/w thermal resistance, junction-to-ambient, max r th,j-a 50 *3 c/w note : 1. pulse width limited by maximum junction temperature 2. duty cycle 1% 3. surface mounted on 1 in2 copper pad of fr-4 board, 125 c/w when mounted on minimum copper pad characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =250 a v gs(th) 1.0 1.5 3.0 v v ds = v gs , i d =250 a g fs *1 - 25 - s v ds =5v, i d =24a i gss - - 100 na v gs = 20 - - 1 v ds =24v, v gs =0 i dss - - 25 a v ds =20v, v gs =0, tj=125 c i d(on) *1 75 - - a v ds =10v, v gs =10v - 2.6 3 m v gs =10v, i d =30a r ds(on) *1 - 4 5 m v gs =4.5v, i d =24a dynamic ciss - 3850 - coss - 635 - crss - 522 - pf v gs =0v, v ds =15v, f=1mhz
cystech electronics corp. spec. no. : c788h8 issued date : 2010.09.23 revised date : 2010.10.06 page no. : 3/7 MTB03N03H8 cystek product specification characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions qg (v gs =10v) *1, 2 - 48 - qg (v gs =4.5v) *1, 2 - 27 - qgs *1, 2 - 6 - qgd *1, 2 - 16 - nc v ds =15v, v gs =10v, i d =30a t d(on) *1, 2 - 20 - tr *1, 2 - 15 - t d(off) *1, 2 - 65 - t f *1, 2 - 10 - ns v ds =15v, i d =24a, v gs =10v, r gs =2.7 rg - 1.2 - v gs =15mv, v ds =0v, f=1mhz source-drain diode i s *1 - - 75 i sm *3 - - 150 a v sd *1 - - 1.3 v i f =i s , v gs =0v trr - 32 - ns qrr - 12 - nc i f =i s , di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature.
cystech electronics corp. spec. no. : c788h8 issued date : 2010.09.23 revised date : 2010.10.06 page no. : 4/7 MTB03N03H8 cystek product specification recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c788h8 issued date : 2010.09.23 revised date : 2010.10.06 page no. : 5/7 MTB03N03H8 cystek product specification typical characteristics
cystech electronics corp. spec. no. : c788h8 issued date : 2010.09.23 revised date : 2010.10.06 page no. : 6/7 MTB03N03H8 cystek product specification typical characteristics(cont.)
cystech electronics corp. spec. no. : c788h8 issued date : 2010.09.23 revised date : 2010.10.06 page no. : 7/7 MTB03N03H8 cystek product specification edfn5 6 dimension device name date code 8-lead edfn5 6 plastic package cystek package code: h8 marking: *: typical inches millimeters inches millimeters dim min. max. min. max. dim min. max. min. max. a 0.1890 0.2087 4.80 5.30 i 0.0161 0.0307 0.41 0.78 b 0.2165 0.2283 5.50 5.80 j 0.1331 0.1543 3.38 3.92 c 0.2323 0.2402 5.90 6.10 k 0.0370 - 0.94 - d 0.0118 0.0201 0.30 0.51 l 0.0177 0.0280 0.45 0.71 e 0.0500* 1.27* m 0 12 0 12 f 0.0335 0.0472 0.85 1.20 g 0.0059 0.0118 0.15 0.30 h 0.1445 0.1787 3.67 4.54 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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